Figure 4
From: Hole doping effect of MoS2 via electron capture of He+ ion irradiation

(a–d) Comparison of photoemission spectra between the CVD-grown 1L- and 2L-MoS2 samples before and after low-energy (100 eV) He+ ion irradiation. The photoemission data were taken at the photon energy of hν = 360 eV. (e–g) The work functions were measured at three random positions for each sample using an ambient Kelvin probe system.