Figure 5
From: Hole doping effect of MoS2 via electron capture of He+ ion irradiation
(a,d) Optical microscope images of the mechanically exfoliated MoS2 flakes on the SiO2/Si substrates. Comparison of Raman (b,e) and PL (c,f) spectra of 1L-MoS2 samples before and after He+ ion irradiation for 180 s (b,c) and 360 s (e,f). (g) Schematic of available migrations for the S atoms before sputtering with He+ ion irradiation. (h) Displacement dependence of the S atom on the direct bandgap energies of 1L-MoS2.
