Table 2 CMP condition.
Parameter | Condition |
|---|---|
Material | 1-μm-thick SiO2 film on four-inch wafer |
Pad | IC1010/Suba IV |
Down pressure on the wafer | 4 psi |
Down force on conditioner | 3 kgf |
Pad rotation speed | 93 rpm |
Wafer rotation speed | 87 rpm |
Slurry flow rate | 120 mL/min |
Process time | 1 min |
