Table 2 CMP condition.

Material

1-μm-thick SiO₂ film on four-inch wafer

Pad

IC1010/Suba IV

Down pressure on the wafer

4 psi

Down force on conditioner

3 kgf

Pad rotation speed

93 rpm

Wafer rotation speed

87 rpm

Slurry flow rate

120 mL/min

Process time

1 min