Figure 3
From: Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling
PL spectra at 30 K and model fits for devices grown at the limits of growth temperature and bismuth flux. (a) G1B3 grown at 355 °C and (b) G5B3 grown at 405 °C both under the same bismuth BEP of 1.06 × 10–7 mbar. (c) G2B5 grown under a bismuth BEP of 2.12 × 10–7 mbar and (d) G2B1 grown under a bismuth BEP of 0.5 × 10–7 mbar, both grown at 375 °C.
