Table 1 Growth details for the GaAsBi devices25.
From: Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling
Layer name | GaAsBi growth temperature (°C) | Bi BEP (× 10–7 mbar) | Bi content from PL/XRD (% Bi) |
|---|---|---|---|
G1B3 | 355 | 1.06 | 3.6/3.51 |
G2B3 | 375 | 1.06 | 3.2/3.25 |
G3B3 | 385 | 1.06 | 2.7/2.82 |
G4B3 | 395 | 1.06 | 2.2/2.19 |
G5B3 | 405 | 1.06 | 1.3/1.37 |
G2B1 | 375 | 0.5 | 1.2/1.31 |
G2B2 | 375 | 0.76 | 2.2/2.25 |
G2B4 | 375 | 1.5 | 4.0/4.12 |
G2B5 | 375 | 2.12 | 5.3/5.37 |
