Table 2 Summary of best-fit model parameters for each device.

From: Effect of MBE growth conditions on GaAsBi photoluminescence lineshape and localised state filling

Layer

E mob (eV)

E m (eV)

E offset (eV)

σ1 (eV)

σ2 (eV)

σG (eV)

Gamma

RMSE

G1B3

1.276

(1.234)

(0.042)

0.027

0.096

0.046

(1)

0.0229

G2B3

1.271

1.242

0.029

0.033

0.17

0.0343

G3B3

1.319

1.353

− 0.034

0.02

0.43

0.0181

G4B3

1.361

1.401

− 0.040

0.018

0.4

0.0172

G5B3

1.419

1.456

− 0.037

0.015

0.26

0.0255

G2B1

1.422

1.351

0.071

0.031

0.18

0.0298

G2B2

1.33

1.303

0.027

0.035

0.28

0.0272

G2B4

1.242

1.274

− 0.032

0.022

0.37

0.0273

G2B5

1.172

1.25

− 0.078

0.017

0.7

0.0209

  1. Localisation energies and the evaluation wavelength ranges can be found with the raw data in the supplementary material. The values for device G1B3 which are not considered accurate due to poor state filling are enclosed in parentheses.
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