Figure 11
From: The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
HRXRD data analysis of normalized intensity (a) (error at the level of 5% of the value) and FWHM (b) (error at the level of 10% of the value) of the Pendeloesung frings of MQWs grown on the unimplanted and implanted GaN:Si and after annealing at 900 °C, 920 °C and 940 °C.
