Table 1 Summary of the average lifetime of charge carriers from the QDs on quartz and full devices with zero bias, light-emitting mode (+ 3.8 V) and light-detecting mode (− 3.8 V).

From: Dual-functional quantum-dots light emitting diodes based on solution processable vanadium oxide hole injection layer

 

\({a}_{1}\)

\({t}_{1}\)(ns)

\({a}_{2}\)

\({t}_{2}\) (ns)

Average lifetime <\(\tau \)> (ns)

QDs

0.422

5.710

0.558

17.072

14.692

0 V

0.422

1.020

0.578

6.743

6.173

+ 3.8 V

0.768

2.138

0.232

13.140

9.288

− 3.8 V

0.571

0.957

0.429

6.576

5.664

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