Figure 6 | Scientific Reports

Figure 6

From: Tunable electronic structure and magnetic anisotropy in bilayer ferromagnetic semiconductor Cr2Ge2Te6

Figure 6

The spin-polarized projected density of states (PDOS) of Cr2Ge2Te6–Cr for bilayer Cr2Ge2Te6: (a) pristine, (b) compressive strain of 2%, (c) compressive strain of 5%, (d) tensile strain of 1%, (e) electron doping of 0.1 e/u.c, and (f) hole doping of 0.1 e/u.c. (g) The electronic configuration for pristine (left) and doping of − 0.1 e/u.c. (right). The red and blue arrows indicate spin-up and spin-down states, respectively. The occupied states are presented by colorfully filled areas.

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