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Figure 1

From: Enhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process

Figure 1

Schematic of AlGaInP-based μ-LED fabrication procedure. MOVPE growth of epilayers (upper-left panel), followed by the ICP dry etching process for mesa patterning (upper-right panel). Subsequently, the exposed sidewalls were treated using a diluted HF solution for surface recovery (bottom-left panel). The SiNx layer was coated on mesa sidewalls to form passivation (bottom-right panel).

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