Figure 4
From: Scaling laws for ion irradiation effects in iron-based superconductors
Resistivity (at \(T_c\)) increase as a function of the amount of introduced defects in terms of dpa for proton irradiated optimally doped \(\hbox {Ba}_{1-x}\)\(\hbox {K}_{x}\)\(\hbox {Fe}_{2}\)\(\hbox {As}_{2}\) and Ba(\(\hbox {Fe}_{1-x}\)\(\hbox {Co}_x\))\(_{2}\)\(\hbox {As}_{2}\). Data for 3Â MeV H irradiation (white symbols) are taken from Refs.26,27 and obtained by low temperature irradiation and in-situ dc resistivity measurement.
