Figure 2
From: Electrically programmable magnetoresistance in \(\text{AlO}_{x}\)-based magnetic tunnel junctions
Sequential measurements of magnetoresistance of the reported MTJ sample. Pre-applied bias voltages and the sequence for setting the resistance states are indicated by red letters and black arrows in between the graphs whereas the MR measurements were carried out at 5 mV. The bias of 1.4 V (− 1.4 V) sets the device to LRS (HRS) where lower (higher) MR is obtained.
