Figure 3
Results of a proof-of-concept test. (a) Electrical response of the OTV to an optical delta function of about 1 ns FWHM (left). Current waveform (right) demonstrates a fast-equivalent leading edge and decay based on carrier recombination (Eq. (1)). (b) 20 kV test circuit with utilizing a grounded load and electrically floating OTV. (c,d) Measurement of VL and load current, demonstrating the “transconductance like” control similarly exhibited by classical junction devices. (e) Speed comparison of state-of-the-art high voltage junction devices with a prototype bulk conduction device. Switching frequency is significantly faster than MOSFET and IGBT technology, enabling high speed low loss switching. Comparison is based on reference11. Power is normalized to the output at 1 kHz. The slope in our bulk condition OTV device was due to external circuitry.
