Figure 4
From: Enhanced ferroelectric switching speed of Si-doped HfO2 thin film tailored by oxygen deficiency
Ferroelectric switching dynamics of the HfO2 films. Time and voltage dependence of the ΔP(t)/2Ps values of the (a) LTA and (b) HTA films. The solid lines represent the fitting results obtained using the NLS model with a Lorentzian distribution of the characteristic switching time. (c) Fitting results of the Lorentzian distribution of the characteristic switching time for LTA (dashed lines) and HTA (solid lines) films.
