Figure 4
From: Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice
(a) Breakdown I-V characteristics and corresponding multiplication gain vs applied reverse bias at 200 K. Dark current and photocurrent are shown on the left axis; gain is shown on the right axis. (b) Simulated electric field profile under different applied reverse biases of SAM-APD structure.
