Figure 5
From: Electron tunneling between vibrating atoms in a copper nano-filament
Equivalency between making a monoatomic contact by elongation of an indented Cu wire in a free space and formation of a chain of Cu atoms in the matrix of a thin dielectric (TaOx) in a ReRAM cell and electrochemical deposition in CuSO4 ion solution and a method for monoatomic contact formation using Scanning Transmission Microscope (STM). For both types of point contact fabrication, quantization of conductance in units Go = 2e2/h has been observed in large number of publications cited in this paper.
