Figure 3

(a) Cross-sectional TEM images of the GaSb QD and GaAs layer, and selected-area diffraction patterns of (b) GaAs layer and (c) GaSb QD for confirming change of growth direction in GaSb QD.
(a) Cross-sectional TEM images of the GaSb QD and GaAs layer, and selected-area diffraction patterns of (b) GaAs layer and (c) GaSb QD for confirming change of growth direction in GaSb QD.