Table 1 Fitting parameters of TRPL data at each energy.

From: Optical characteristics of type-II hexagonal-shaped GaSb quantum dots on GaAs synthesized using nanowire self-growth mechanism from Ga metal droplet

Energy (eV)

A1

τ1 (ns)

A2

τ2 (ns)

Average life time (ns)

Charge transfer rate

1.291

29,114

0.468

10,386.2

3.081

2.300663

3.54721E+08

1.24

28,037

0.863

9521.1

4.142

2.895174

2.65466E+08

1.127

7134

1.264

11,265.1

5.979

5.422287

1.04488E+08

1.033

887

1.687

4745

8.454

8.21065

4.18570E+07

0.992

0

0

2556.9

11.248

11.248

8.96864E+06

0.953

0

0

1037.2

12.510

12.51 (tQD)

0

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