Table 1 Summary of upper layer thickness, Hall mobility, and charge carrier density (N) estimated by SEM analysis, and Hall effect and CV measurements, respectively.

From: Solution-processed near-infrared Cu(In,Ga)(S,Se)2 photodetectors with enhanced chalcopyrite crystallization and bandgap grading structure via potassium incorporation

 

Upper layer thickness (nm)

Hall mobility (cm2 V−1 s−1)

N (cm−3)

solCIGS

267 ± 25

7.3 ± 2.5

5.24 × 1016

K-solCIGS

420 ± 38

19.1 ± 4.9

4.11 × 1016