Figure 1
From: Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
The silicon lattice containing a Phosphorus-Vacancy defect. The vacancy taking the place of one of Si-atom closest to P atom (position 1) can move through the lattice away from the P atom (position 3) and approach again close to P atom (position \(1^{\prime }\))23.
