Figure 6
From: Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

Cumulative distribution of DCR normalized to the active volume for SPADs pre- and post-irradiated with a DDD of 376 TeV/g.
From: Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
Cumulative distribution of DCR normalized to the active volume for SPADs pre- and post-irradiated with a DDD of 376 TeV/g.