Table 3 RTS occurrence in irradiated SPADs with DDD=376 TeV/g.
From: Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
Active area (μm2) | Total SPADs | SPADs with RTS | 2-levels | 3-levels | Multi levels (\(\ge 4\)) | Total RTS fraction |
|---|---|---|---|---|---|---|
PN layout | ||||||
\(10\times 10\) | 58 | 46 | 6 | 8 | 32 | \(79\pm 5\) % |
\(15\times 15\) | 38 | 30 | 3 | 3 | 24 | \(79\pm 6\) % |
\(20\times 20\) | 58 | 49 | 8 | 0 | 41 | \(84\pm 5\) % |
Total | 154 | 116 | 17 | 11 | 97 | |
PWNISO layout | ||||||
\(10\times 10\) | 130 | 48 | 17 | 3 | 28 | \(37\pm 4\) % |
\(15\times 15\) | 80 | 50 | 8 | 3 | 39 | \(63\pm 5\) % |
\(20\times 20\) | 129 | 105 | 15 | 4 | 86 | \(81\pm 3\) % |
Total | 339 | 203 | 40 | 10 | 153 | |
