Figure 2

Physical characteristics of the high power microwave exposure device “Chundoong”. (A) Diode voltage and diode current, (B) Microwave envelope signal, (C) Axial electric field from simulation, (D) Electric field from HFSS simulation, (E) Microwave realsignal, (F) Dominant frequency of the microwaves, (G) Temperature of the solution before and after microwave exposure, (H) pH of the solution before and after microwave exposure, and NOx concentration in (I) PBS, (J) water, and (K) cell culture media.