Figure 1

(a) 3D schematic illustration of the calculation model with MS integrated B-OLED (MIB-OLED, MS layer in blue). A dipole emitter is located at the center of the device. Emitted light from the dipole emitter is directed to the bottom through glass substrate to air ambience. One of the unit cells of the MIB-OLED is shown enlarged in the inset. Lengths and widths of the eight cut-out slots are indicated to L₁, L₂, and W (Λ = 500 nm). (b) 2D layer cross-section of the MIB-OLED vs. conventional planar B-OLED with materials and thicknesses of the model. The vertical location of the dipole emitter is 50 nm apart from EIL for constructive two-beam interference of micro-cavity effects. (c–f) Schematic illustration of the surface and the domain used to calculate the coupling mode power of the B-OLED. The amplitude of Poynting vectors through blue-colored surfaces of (c) air, (d) substrate, and (e) OLED device represents the power coupled to the air, substrate, and WG modes. The red arrows represent the direction of Poynting vector in each mode. (f) Plasmon loss is calculated by the integration of power dissipation in the whole volume of the OLED structure.