Figure 4

(a) Schematic diagram of the fabrication processes to implement the MIB-OLED model along with a final cross-section. (b) SEM image of a fabricated MS sample prior to material deposition (scale bars: 500 nm): tilted (left) and top view (middle). The magnified image on the right represents a unit MS pattern with a 500-nm size. (c) Depth profile of the measured SEM image of slots across the white dashed line in (b). (d) Schematic set-up for passive experimental characterization of MS for the MIB-OLED model (LS: light source, OB: objective lens, BS: beam splitter, SP: spectrometer, and L1–L4: collimation optics). (e) Measured and simulated reflectance spectra for only MS and gold thin film deposited on BK7 substrate. Thickness of MS and gold film is 20 nm and MS composed of mixed-slot arrays whose structural parameters of L₁, L₂, and W are fixed to 200, 160, and 60 nm, respectively. (f) Comparison of reflectance spectrum between conventional B-OLED and MS-integrated cavity structure. Integrated MS has a 20-nm thickness and its structural parameters of L₁, L₂, and W are 200, 160, and 60 nm.