Figure 4

(a) Sheet resistance measured at ON state region vs the number of layers in the GNR-FET. (b) Is a resistance model composed of parallel channel, assuming that the conductance between layers can be ignored.

(a) Sheet resistance measured at ON state region vs the number of layers in the GNR-FET. (b) Is a resistance model composed of parallel channel, assuming that the conductance between layers can be ignored.