Table 1 Structural and electronic parameters of \(\hbox {Sb}_2\hbox {X}_3\) (X = S, Se, Te) monolayers as shown in Fig. 1b, including lattice constants \(\mathbf{a},b \); the bond lengths between Sb-X atoms \(d_{1,2,3,4}\); the bond angles between X-Sb-X atoms \(\theta _{1,2,3}\); the thickness defined by the difference between the largest and smallest z coordinates of X atoms (t); the cohesive energy per atom, \((E_{coh})\); the charge transfer \((\Delta {Q})\) between atoms Sb and \(X_{1}\) (\(X_{2}\)) atoms are shown inside (outside) parentheses as shown in Fig. 1b; the work function \((\Phi ).\)

From: Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure

 

a (b) (Ã…)

\({d}_{1/2}\) (Ã…)

d\(_{3/4}\) (Ã…)

t (Ã…)

\(\theta _{1/2/3}\) (\(^{\circ }\))

\(E_{coh}\) (eV/atom)

\(\Delta {Q}\) (e)

\(\Phi \) (eV)

\(E_{g}\) (eV)

\(\hbox {Sb}_2\hbox {S}_3\)

3.86 (10.92)

2.66/2.59

2.56/4.94

3.17

91/106/86

− 7.94

0.75 (0.82)

5.17

1.22 (2.15)

\(\hbox {Sb}_2\hbox {Se}_3\)

3.92 (9.99)

2.75/2.90

2.77/4.97

3.66

95/90/92

− 7.36

0.59 (0.64)

4.94

0.96 (1.35)

\(\hbox {Sb}_2\hbox {Te}_3\)

3.87 (9.65)

2.95/3.13

2.99/3.02

3.79

97/86/94

− 6.81

0.36 (0.37)

4.53

0.86 (1.37)

  1. The band gap \((E_{g})\) of PBE and HSE06 are shown outside and inside parentheses, respectively.