Table 1 Comparison table of GaN humidity sensors.
From: Humidity sensor based on Gallium Nitride for real time monitoring applications
Refs. | Fabrication method | Sensing material | Range (%) | Response/recovery time (s) | Sensitivity | Sensor type | |
|---|---|---|---|---|---|---|---|
Chemical etching and spray coating | ZnO/Porous GaN | 0–60 | 7/13 | 161 | Diode formation | ||
Chemical vapor deposition | Ni patterned GaN nanowire | 15–85 | 22.59/26.16 | Diode formation | |||
Dip coating | 3D dandelion like GaN flower | 11–97 | – | 1000 | Interdigitated electrodes | ||
Spin coating | GaN Powder | 75–95 | – | – | Interdigitated electrodes | ||
Spin coating | Ga2O3-Na–K Doped | 10–85 | 6/21 | 500 | Interdigitated electrodes | ||
MOCVD | \(\beta\)-Ga2O3 nanowires on GaN substrate | 35–95 | 25/45 | 30 | Resistive sheet formation | ||
Chemical method etching from GaCl3 | GaN nanoparticles | 4–84 | 140/130 | 105 | – | ||
MOCVD | \(\beta\)-Ga2O3 nanowires on GaN substrate | 30–90 | 24.94/6.24 @ 30% RH | 319 in dark | Interdigitated electrodes | ||
1.36/1.8 @ 90% RH | 7.3 in UV | ||||||
This work | Pulsed DC magnetron sputtering and inkjet printing | ZnO buffer layer/GaN thin film | 0–100 (Linear response) | Impedance | 3.5/9 | 79 kΩ/RH% | Interdigitated electrodes |
Capacitance | 11/6 | 8.53 nF/RH% | |||||
