Figure 1
From: Investigation of the thermal tolerance of silicon-based lateral spin valves
(a) A schematic of Si-based lateral spin valves. The channel width along y direction was 21 µm. (b) Spin accumulation signals, i.e., nonlocal voltage Vnl as a function of magnetic flux density along the y direction By, for sample A before annealing (black) and after annealing at 300 °C (red) and 350 °C (blue), obtained by the NL4T method. The channel length Lch was 2.0 µm, and the channel thickness t was 80 nm. The widths of F1 and F2 were 0.2 and 1.2 µm, respectively. (c) Spin accumulation signals of sample A’ before annealing (black) and after annealing at 300 °C (red) and 350 °C (blue), obtained by the NL4T method. The channel length Lch was 1.6 µm, and the channel thickness t was 100 nm. The widths of F1 and F2 were 0.5 and 2.0 µm, respectively. (d, e) I–V characteristics of (d) F1 and (e) F2 before annealing (black) and after annealing at 300 °C (red) and 350 °C (blue) for sample A.
