Figure 1

(a) Out of plane XRD profile of 4H–21DNTT films on Parylene C/glass substrate fabricated by solution shearing and cross-sectional AFM profile of one monolayer of 4H–21DNTT film (inset). (b) Molecular structure of 4H–21DNTT. (c) Device Schematic of 4H–21DNTT OTFT with bottom-gate, bottom-contact architecture. (d) Schematic illustration of solution shearing set-up. (e) Literature overview of OTFT effective mobility for short channel length devices for channel length in range of 300 nm–50 μm^{12,13,14,15,16,17,18,19,20,41,42,43,45,46,47,48,49,50,51,52,53,54,55,56,57,58,59,60,61,62,63,64,65} and for 4H–21DNTT OTFT theoretical effective mobility (μ_{sat_theoretical}) calculation; μ_{int_avg} = 12.5 cm² V⁻¹ s⁻¹ and R_cW = 1 kΩcm.