Figure 3

(a) Polarized optical microscopy (POM) images of the 4H–21DNTT crystalline film deposited on channel region defined by Au bottom contacts on Parylene C/glass substrate. (b) Output characteristics 4H–21DNTT OTFT at different gate bias voltage. (c) Transfer characteristics of the 4H–21DNTT OTFT devices (W/L = 400 μm/80 μm) on Parylene C/glass substrate in the saturation region (V_D =  − 20 V) μ_sat = 13.0 cm² V⁻¹ s⁻¹ and linear region (V_D =  − 1 V) μ_lin = 13.6 cm² V⁻¹ s⁻¹. (d) Saturation and linear mobility vs gate voltage plot for 4H–21DNTT OTFT prepared by shearing on Parylene C/glass substrate.