Figure 4 | Scientific Reports

Figure 4

From: Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H–21DNTT

Figure 4

(a) Polarized optical microscopy (POM) images of the 4H–21DNTT crystalline film deposited on channel region defined by Au bottom contacts on Parylene C/flexible (PEN) substrate. (b) Output characteristics 4H–21DNTT OTFT at different gate bias voltage. (c) Transfer characteristics of the 4H–21DNTT OTFT devices (W/L = 450 μm/85 μm and 15 μm) on Parylene C/ flexible (PEN) substrate in the saturation region (VD =  − 20 V) μsat (L = 85 μm) = 9.40 cm2 V−1 s−1 and μsat (L = 15 μm) = 6.33 cm2 V−1 s−1. (d) Photograph of OTFT fabricated on flexible PEN substrate. (e) Saturation mobility (L = 85 μm and 15 μm) vs gate voltage plot for 4H–21DNTT OTFT prepared by shearing on Parylene C/flexible (PEN) substrate.

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