Figure 5
(a) Total device resistance (RTOTALW) plotted as a function of the channel length for 4H–21DNTT OTFT for various gate overdrive voltages (VG − VTH). (b) Contact resistance calculated using the transmission line method (TLM) plotted as a function of gate overdrive voltages (VG − VTH). (c) Transfer characteristics of the 4H–21DNTT OTFT devices (W/L = 450 μm/15 μm) on Parylene C/glass substrate in the saturation region (VD = − 20 V) μsat = 8.8 cm2 V−1 s−1 and linear region (VD = − 1 V) μlin = 6.8 cm2 V−1 s−1. (d) Saturation and linear mobility vs gate voltage plot for 4H–21DNTT OTFT prepared by shearing on Parylene C/glass substrate. (e) Average mobility with standard error vs channel length for 4H–21DNTT OTFT on both glass and flexible (PEN) substrate (For each channel length over 10 devices were used to calculate average mobility).
