Table 2 Model geometric parameters.

From: Simulation of gas sensing mechanism of porous metal oxide semiconductor sensor based on finite element analysis

Parameter

Description

Value

Unit

cyl_H

Gas chamber height

10

mm

cyl_R

Gas chamber radius

3

mm

in_R

Gas input channel radius

1

mm

tube_H

Gas input/output channel height

1

mm

out_R

Gas output channel radius

1

mm

chip_L

Length of the sensor substrate

1

mm

chip_W

Width of the sensor substrate

2

mm

chip_H

Height of sensor substrate

0.1

mm

Front_H

Sensing layer thickness

0.01

mm