Figure 6
From: Smart-cut-like laser slicing of GaN substrate using its own nitrogen
Photographs (upper) and white interference microscopy images (lower) of the samples after epitaxial growth. (a) Schematic image of experimental process. (b) Sample thinned by 18 µm. The arithmetic mean height of the area is 24 nm. (c) Sample thinned by of 47 µm. The arithmetic mean height of the area is 2.1 nm. (d) Sample thinned by 77 µm. The arithmetic mean height of the area is 7.2 nm. (e) Sample grown on commercially available epi-ready GaN substrate. The arithmetic mean height the of area is 8.0 nm.
