Figure 5

For 1T-SRAM cell: (a) nondestructive reading characteristics at VWL = 0.0 V and VBL = 1.0 V and (b) endurance characteristics.
For 1T-SRAM cell: (a) nondestructive reading characteristics at VWL = 0.0 V and VBL = 1.0 V and (b) endurance characteristics.