Table 1 Operating conditions of the 1T-SRAM cell.

From: One-transistor static random-access memory cell array comprising single-gated feedback field-effect transistors

Voltage

Write “1”

Write “0”

Read

Hold

VBL (V)

1.0

0.2

1.0

0.68

VWL (V)

− 1.1

− 1.1

0.0

0.0