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Figure 1

From: Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures

Figure 1

QW structures fabricated for the ELE-ARPES experiment. (a) Schematic overview of the c-GaN/AlN heterostructure (left) and energy band diagram of the single QW including the two occupied CSB states (E1 and E2) located at z = 3 nm below the sample. (b) Same for the GaAs/AlGaAs QW heterostructure, showing one single occupied CSBs (E1) at z = 6 nm below the sample surface.

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