Figure 2
From: Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
Characterization of the surface properties of the c-GaN/AlN and GaAs/AlGaAs samples. LEED pattern are shown in (a) and (d); RHEED in (b) and (e), and AFM in (c) and (f).
