Figure 5
From: Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
Comparison of the angle-integrated ARPES spectra at hv = 7 eV from the GaAs/AlGaAs heterostructure and from the c-GaN/AlN heterostructure. At the Fermi energy (0 eV), only the spectra from the c-GaN/AlN heterostructure show a non-vanishing photoemission intensity, which can be reconducted to the presence of the QW states.
