Figure 3 | Scientific Reports

Figure 3

From: Versatilely tuned vertical silicon nanowire arrays by cryogenic reactive ion etching as a lithium-ion battery anode

Figure 3

Vertical Si nanowire arrays fabricated by cryogenic ICP-RIE with different process parameters. The resulting Si nanowire profiles are affected by changing (a) temperature, (b) oxygen content, (c) pressure, (d) RF power, and (e) ICP power. Each of those parameters was varied while keeping the other parameters constant at the default parameter (see “Methods”). The increase in temperature, oxygen content, and pressure, respectively, led to more positively-inclined sidewalls. On the contrary, the rises of RF and ICP powers could remove the positive sidewalls yielding higher nanowires.

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