Table 2 Experimental ambient-pressure frequency (ω0), pressure coefficient (δ), and Grüineisen parameter (\(\overline{\gamma }\)) of the Raman active modes observed from the SDD-GaSe film and the GaSe bulk.

From: Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery

Mode parameter

\({\omega }_{0}\) (cm−1)

\(\delta = \frac{d\omega }{dP}\) (cm−1/GPa)

\(\overline{\gamma }= \frac{1}{{\omega }_{0}}\frac{d\omega }{dP}\) (× 10–3 GPa−1)

Pressure range

Film

Bulk

Film

Bulk

Film

Bulk

\({E}_{1g}^{1}\)

59.9

58.8

0.41 ± 0.02

0.26 ± 0.02

6.8 ± 0.3

4.4 ± 0.4

0–28 GPa

\({E}_{2g}^{2} (TO)\)

206.4

212.4

2.51 ± 0.04

2.35 ± 0.07

12.2 ± 0.2

11.1 ± 0.3

0–16 GPa

2.31 ± 0.03

2.04 ± 0.06

11.2 ± 0.2

9.6 ± 0.3

0–28 GPa

\({E}_{1g}^{2}/{A}_{1} (LO)\)

 

251.4

 

1.58 ± 0.03

 

6.3 ± 0.1

0–16 GPa

\({A}_{1g}^{1}\)

133.2

133.1

3.26 ± 0.18

4.96 ± 0.18

24.5 ± 1.4

37.3 ± 1.4

0–5 GPa

2.33 ± 0.04

2.41 ± 0.09

17.5 ± 0.3

18.1 ± 0.7

0–28 GPa

\({A}_{1g}^{2}\)

308.3

308.1

2.78 ± 0.16

3.85 ± 0.17

9.0 ± 0.5

12.5 ± 0.5

0–5 GPa

2.29 ± 0.03

2.42 ± 0.06

7.4 ± 0.1

7.9 ± 0.2

0–28 GPa

\({A}_{1} (TO)\)

 

235.1

 

− 4.84 ± 0.19

 

− 20.6 ± 0.8

0–5 GPa

− 2.09 ± 0.14

− 8.9 ± 0.6

0–28 GPa

  1. The bold values indicate the highlighted pressure coefficients of out-of-plane Raman active modes in the SDDGaSe film and bulk at a low-pressure range (< 5 GPa).