Figure 6 | Scientific Reports

Figure 6

From: Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress

Figure 6

Bright-field TEM images of the TSD at EMS point D in diode #1DX with (a) g = 0002 and (b) g = \(11\overline{2}0\). Note that the sample surface was directed downward. (c) Dark-field LACBED image of the TSD (denoted by the red dashed line). (d) Magnified LACBED pattern around g = 0008. The white arrows indicate eight split lines resulting from the interaction of the Laue zone line for g = 0008 and the TSD line.

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