Figure 4

(a) Longitudinal (green) and Hall (orange) resistances at B = 3 T and T = 4.2 K as a function of gate bias. (b) Local resistance as a function of the gate voltage measured along segments with different lengths (A to C) and nonlocal result (D). Insets show device scheme and measurement configurations. The dashed lines are the expected resistances calculated using Landauer-Buttiker formalism for a device with 9 terminals including the contribution of several pairs of edge states. (c) Resistance as a function of the gate voltage for different temperatures. The inset shows the resistance at CNP as a function of 1/T with solid line corresponding to \(R \sim \exp (\Delta /2k_BT )\) with an activation energy⁶⁴ \(\Delta = 0.8\) meV. Shubnikov-de Haas oscillations as function of (d) temperature and (e) gate voltage. Inset in (d) shows the fitting of the amplitude dependence at a fixed magnetic field of 1.2 T for two different values of \(V_g-V_{CNP}\) where the solid line is a fitting using Lifshitz-Kosevich formula. Curves in (e) were vertically shifted for clarity and the dashed line is a guide to the eye for the change in the oscillations phase.