Figure 3
From: NAND and NOR logic-in-memory comprising silicon nanowire feedback field-effect transistors
LIM retention characteristics. (a) Time-dependent retention characteristics for VOUT of NAND LIM, following the input logic of ‘00’, ‘01’, ‘10’, and ‘11’ with each pulse width of 5 ns, respectively. (b) Time-dependent retention characteristics for VOUT of NOR LIM, following the input logic of ‘00’, ‘01’, ‘10’, and ‘11’ with each pulse width of 5 ns, respectively. The retention time for output logic is the time corresponding to 37% of the initial VOUT.
