Table 1 Comparison of performance parameters between the neuron device of the present study and the neuron devices and circuits developed by other research groups.
From: Neural oscillation of single silicon nanowire neuron device with no external bias voltage
References | Based device (length) | Approximated components | Number of external bias voltage | Supply voltage (V) | Synaptic input type | Energy (J/Spike) | Firing frequency |
|---|---|---|---|---|---|---|---|
MOSFET (500 nm) | 1 transistor | 1 | 1.00 | Current | 9.5 × 10−13 | ~ 300 Hz | |
FBFET (1000 nm) | 5 transistors | 2 | 1.50, 1.00 | Voltage | 2.5 × 10−13 | ~ 300 Hz | |
FBFET (2000 nm) | 6 transistors | 2 | 1.50, 1.10 | Voltage | 6.2 × 10−13 | ~ 30 kHz | |
FBFET (700 nm) | 6 transistors | 2 | 1.20, 1.00 | Voltage | - | ~ 2 MHz | |
ReRAM (65 nm) | More than 20 transistors | 6 | 1.30, 1.30 1.30, 1.00 0.50, 1.30 | Voltage | 2.14 × 10−12 | ~ 10 kHz | |
CBRAM (120 nm) | 4 transistors 1 capacitor | 1 | - | Current | 5.5 × 10−10 | ~ 1 MHz | |
FeFET (50 nm) | 4 transistors 1 capacitor | 3 | 0.70, -0.30 -0.30 | Voltage | 1 × 10−13 | ~ 1 MHz | |
FeFET (14 nm) | 2 transistors 1 capacitor | 2 | 1.20, 0.30 | Voltage | 6.3 × 10−10 | ~ 10 kHz | |
FBFET (100 nm) | 4 transistors 1 capacitor | 1 | 0.27 | Current | 2.9 × 10−15 | ~ 20 kHz | |
TFET (32 nm) | 1 transistor | 1 | - | Voltage | 3.2 × 10−15 | 150 kHz | |
This work | Gated diode (50 nm) | 1 gated-diode | 0 | None | Voltage | 4.5 × 10−15 | ~ 8 MHz |
