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Figure 1

From: CBRAM technology: transition from a memory cell to a programmable and non-volatile impedance for new radiofrequency applications

Figure 1

(a) Schematic of the MIM stack. (b) Equivalent circuit. (c) Test results of 50 consecutive SET-RESET operations each on five different cells with current limits Ilim = 10 mA, Ilim = 1 mA, Ilim = 100 µA, Ilim = 10 µA and Ilim = 1 µA, SET triangular pulse sweep rate = 2.8 V/s and RESET rectangular pulse width = 1 s.

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