Figure 4 | Scientific Reports

Figure 4

From: CBRAM technology: transition from a memory cell to a programmable and non-volatile impedance for new radiofrequency applications

Figure 4

CBRAM switch cells on copper cladded FR-4 substrates used for DC characterization studies. (a) Photograph of fabricated CBRAM switch cell matrix. (b) Layer structure of a single cell of this group. DC performance tests over 60 different cells. (c) Stability results after programming virgin cells and (d) time to target for the tested target resistances, Rt  = {5 Ω, 50 Ω, 500 Ω, 5000 Ω}.

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