Figure 5 | Scientific Reports

Figure 5

From: CBRAM technology: transition from a memory cell to a programmable and non-volatile impedance for new radiofrequency applications

Figure 5

CBRAM based CPW shunt mode RF switch programmed using the proposed PRPA algorithm. (a) Photograph of fabricated device. (b) Topology and layer structure. (c) S21 parameter model values of the CBRAM cell connected in series to a transmission line of characteristic impedance of Z0 = 50 Ω. (d) S21 parameter model values of the CBRAM cell connected in parallel (shunt) to a transmission line of characteristic impedance of Z0 = 50 Ω. The CBRAM cell has been modelled as a shunt RC circuit of impedance ZSW in both cases (c,d) with C = 1681 fF. (e) Simulation of the S21 parameter of the presented RF switch up to 20 GHz for ON and OFF states. (f) Measured RF transmission characteristics. (g) Measured time stability of the RF transmission.

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