Table 3 A comparison between the performance obtained with our RF switch and the state of the art in the field of CBRAM RF switch.

From: CBRAM technology: transition from a memory cell to a programmable and non-volatile impedance for new radiofrequency applications

Ref.

Technology

IL (dB)

IS (dB)

Bandwidth (GHz)

RON (Ω)

COFF (fF)

FOM (THz)

Area (µm2)

Actuation voltage (V)

Power handling (W)

Endurance (#cycles)

This

CBRAM

 < 1.1

 > 25

DC-3

2

1681

0.051

Π × 106

16

N/A

 > 103

8

CBRAM

 < 0.5

 > 35

DC-6

6

9

2.95

400

1

0.5

N/A

9

CBRAM

 < 0.3

 > 30

DC-40

2.6

1.45

42.2

0.6

3

0.1

 < 103

10

2DM CBRAM

 < 0.25

 > 29

DC-67

2.7

0.84

70

0.03

1

N/A

 > 103

11

2DM CBRAM

 < 0.2

 > 15

DC-110

1.6

2.3

43

0.25

1.5

0.1

N/A

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